SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA; R
BE
=;
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-3A; I
B
=-0.15A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
120
MIN
-30
-60
-6
2SB919
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
V
-0.5
-0.1
-0.1
280
V
mA
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Turn-off time
I
C
=-4A ; V
CC
=-10V
I
B1
=-I
B2
=-0.2A;R
L
=2.5B
0.1
0.2
0.03
µs
µs
µs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
SAVANTIC [ Savantic, Inc. ]
