SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD239/A/B/C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BD239
BD239A
BD239B
BD239C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=30mA; IB=0
V
80
100
VCEsat
Collector-emitter saturation voltage
Base-emitter on voltage
IC=1 A;IB=0.2 A
IC=1A ; VCE=4V
VCE=30V; IB=0
0.7
1.3
V
V
VBE
BD239/A
Collector cut-off current
BD239B/C
ICEO
0.3
mA
V
CE=60V; IB=0
BD239
VCE=45V; VBE=0
VCE=60V; VBE=0
VCE=80V; VBE=0
VCE=100V; VBE=0
VEB=5V; IC=0
BD239A
Collector cut-off current
BD239B
ICES
0.2
mA
mA
BD239C
Emitter cut-off current
DC current gain
IEBO
hFE-1
hFE-2
1
IC=0.2A ; VCE=4V
IC=1A ; VCE=4V
40
15
DC current gain
2
SAVANTIC [ Savantic, Inc. ]
