SavantIC Semiconductor
Product Specification
Silicon PNP Darligton Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type BD675/BD677/BD679
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD676/BD678/BD680
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
BD676
V
CBO
Collector-base voltage
BD678
BD680
BD676
V
CEO
Collector-emitter voltage
BD678
BD680
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-45
-60
-80
-45
-60
-80
-5
-4
-0.1
40
150
-55~150
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
3.13
UNIT
/W