SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·DARLINGTON
·High DC current gain
·Complement to type MJ2500/2501
APPLICATIONS
·For use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
MJ3000/3001
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
PARAMETER
MJ3000
V
CBO
Collector-base voltage
MJ3001
MJ3000
V
CEO
Collector-emitter voltage
MJ3001
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
80
5
10
0.2
150
200
-55~200
V
A
A
W
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
SAVANTIC [ Savantic, Inc. ]
