SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
MJ4033
V
CEO(SUS)
Collector-emitter
sustaining voltage
MJ4034
MJ4035
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
I
C
=10A; I
B
=40mA
I
C
=16A; I
B
=80mA
I
C
=10A ; V
CE
=3V
V
CE
=30V; I
B
=0
I
CEO
Collector cut-off current
V
CE
=40V; I
B
=0
V
CE
=50V; I
B
=0
I
EBO
h
FE
Emitter cut-off current
DC current gain
V
EB
=5V; I
C
=0
I
C
=10A ; V
CE
=3V
I
C
=0.1A ;I
B
=0
CONDITIONS
MJ4033/4034/4035
SYMBOL
MIN
60
80
100
TYP.
MAX
UNIT
V
2.5
4.0
3.0
V
V
V
3.0
mA
5.0
1000
mA
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.17
UNIT
/W
2