SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type MJE700/701/702/703
·High DC current gain
·DARLINGTON
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
MJE800/801/802/803
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
PARAMETER
MJE800/801
V
CBO
Collector-base voltage
MJE802/803
MJE800/801
V
CEO
Collector-emitter voltage
MJE802/803
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
80
5
4
0.1
40
150
-55~150
V
A
A
W
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
SAVANTIC [ Savantic, Inc. ]
