2SA1020
PNP Transistor
Elektronische Bauelemente
RoHS Compliant Product
Plastic-Encapsulate Transistors
A suffix of "-C" specifies halogen & lead-free
T O-
92
MOD
6.0
±0.2
4.9
±0.2
FEATURE
Power Amplifier Applications
1.0
±0.1
Symbol
V
CBO
V
CEO
V
EBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
Value
-50
-50
-5
-2
900
-55~+150
Units
V
V
V
A
mW
O
14
±0.2
0.50
+0.1
–0.1
(1.50
Typ.)
1.9
+0.1
–0.1
1 2 3
3.0
±0.1
0.45
+0.1
–0.1
MAXIMUM RATINGS
Ta=25
C unless otherwise noted
o
I
C
P
D
T
J,
T
stg
2.0
+0.3
–0.2
8.6
±0.2
C
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
o
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(sat)
h
FE
1
fT
C
ob
Min
-50
-50
-5
-
-
-
-
70
-
-
Typ.
-
-
-
-
-
-
-
-
100
40
Max
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-50V,I
E
=0
V
BE
=-5 V,I
C
=0
I
C
=- 1A,I
B
=-50mA
I
C
=- 1 A,I
B
=- 50mA
V
CE
=-2 V, I
C
=- 500A
V
CE
=-2 V, I
C
=- 500mA
V
CB
=-10 V , f=1MHz
-1
-1
-0.5
-1.2
240
-
-
MH z
pF
Classification of hFE1
Rank
Range
O
70~140
Y
120~240
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
1
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SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
