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BAV170 参数 Datasheet PDF下载

BAV170图片预览
型号: BAV170
PDF下载: 下载PDF文件 查看货源
内容描述: 低漏电双二极管 [Low-leakage Double Diode]
分类和应用: 二极管PC
文件页数/大小: 3 页 / 402 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号BAV170的Datasheet PDF文件第2页浏览型号BAV170的Datasheet PDF文件第3页  
BAV170
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Low-leakage Double
Diode
Plastic-Encapsulate Diode
FEATURES
Low leakage current: typ. 3pA
Switching time: typ. 0.8µs
Continuous reverse voltage:max.75V
1
Repetitive peak reverse voltage:max.85V
2
Repetitive peak forward current: max. 500mA.
MARKING:JX
A
L
3
Top View
B S
V
G
C
D
H
K
J
SOT-23
Dim
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
B
Maximum Ratings @T
A
=25℃
Parameter
Repetitive Peak reverse voltage
DC Blocking Voltage
continuous forward current
single diode loaded; note1;
double diode loaded; note1;
repetitive peak forward current
non-repetitive peak forward current
square wave; Tj=25C prior to surge;
tp=1μs
tp=1ms
tp=1s
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note1;
Total Power Dissipation
Junction temperature
Storage temperature range
Note1.Device mounted on a FR4 printed-circuit board.
Symbol
V
RRM
V
R
I
F
I
FRM
Limits
85
75
215
125
500
Unit
V
V
mA
mA
C
D
G
H
J
K
L
S
V
I
FSM
4
1
0.5
360
500
250
150
-65 to+150
A
All Dimension in mm
Rth j-tp
Rth j-a
P
tot
T
J
T
STG
K/W
K/W
mW
Electrical Characteristics @T
A
=25℃
Parameter
Symbol
V
F1
Forward voltage
V
F2
V
F3
V
F4
reverse current
Reverse recovery time
Diodes Capacitance
I
R
t
rr
C
d
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
I
F
=I
R
=10mA,R
L
=100Ω
V
R
=0,f=1MHz
2
Conditions
Min.
Typ.
Max.
0.9
1.0
1.1
1.25
5
3
Unit
V
V
V
V
nA
us
pF
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
27-Sep-2010 Rev. B
Page 1 of
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