BC857S
Elektronische Bauelemente
RoHS Compliant Product
PNP Silicon
Multi-Chip Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
O
8
o
0
o
*
Features
Power dissipation
P
CM
: 0.3 W (Tamp.= 25 C)
Collector current
I
CM
: -0.2 A
Collector-base voltage
V
(BR)CBO
: -50 V
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Operating & Storage junction Temperature
T
j
, T
stg
: -55 C~ +150 C
O
O
C
1
B
2
E
2
.043(1.10)
.035(0.90)
Marking : 3C
E
1
B
1
C
2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
O
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
Test
conditions
MIN
-
50
-
45
TYP
MAX
UNIT
V
V
V
Ic=-
10
µA, I
E
=0
Ic=-
10
mA, I
B
=0
I
E
=-
10
µA, I
C
=0
V
CB
=-
30
V, I
E
=0
V
CE
=-
5
V, I
C
=-
2
mA
I
C
=-
10
mA, I
B
=-
0.5
mA
I
C
=-
100
mA, I
B
=-5mA
V
CE
=-
5
V, I
C
=-
2
mA
V
CE
=-
5
V, I
C
=-
10
mA
V
CE
=-
5
V, I
C
=-
10
mA , f=
100
MHz
V
CB
=-
10
V, I
E
=0, f=
1
MHz
-5
-
15
nA
125
630
-0.3
-0.65
V
V
V
V
MHz
pF
dB
Collector-emitter saturation voltage
V
CE(sat)
V
BE
Base-emitter voltage
V
BE(1)
Transition frequency
Collector output capacitance
Noise figure
-0.6
-
0.75
-0.82
200
3.5
2.5
f
T
C
ob
NF
V
CE
=-5V, I
C
=-0.2mA
F=1kHZ, RS=2K
Ω
,BW=200H
Z
Note: 1 Short duration test pulse used to minimize self-heating effect.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
