BCX70K
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
3
Low Current
Low Voltage
Collector
1
L
3
Top View
2
C B
1
2
K
E
D
MARKING : AK
Base
F
G
H
J
REF.
Emitter
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
45
45
5
200
250
150, -55~150
UNIT
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Output Capacitance
Noise Figure
Gain-Bandwidth Product
TEST CONDITIONS
I
C
=10µA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=1µA, I
C
=0
V
CE
=45V, V
BE
=0
V
CE
=5V, I
C
=10µA
V
CE
=5V, I
C
=2mA
V
CE
=1V, I
C
=50mA
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
=-0.25mA
I
C
=50mA, I
B
=1.25mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, I
E
=0, f =1MHz
V
CE
=5V,I
C
=200µA,f=1KHZ,
BW=200HZ,RS=2KΩ
V
CE
=5V, I
C
=10mA,f=100MHz
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE1
h
FE2
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
BE
C
OB
NF
F
T
MIN.
45
45
5
TYP.
MAX.
UNIT
V
V
V
nA
20
100
380
100
0.05
0.1
0.6
0.7
0.55
1.7
6
100
250
630
0.35
0.55
0.85
1.05
0.75
V
V
V
V
V
pF
dB
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2009 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
