C1815T
Elektronische Bauelemente
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
TO-92
G
H
Power Dissipation
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
C1815T-O
70~140
C1815T-Y
120~240
C1815T-GR
200~400
K
A
J
D
B
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
60
50
5
150
400
125, -55 ~ 125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
NF
Min.
60
50
5
-
-
-
70
-
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.1
700
0.25
1
-
3.5
10
Unit
V
V
V
μA
μA
μA
V
V
MHz
pF
dB
Test condition
I
C
=100μA, I
E
=0
I
C
=0.1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA, f=30MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA, f=1KHz,
R
G
=10KΩ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Mar-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
