CZD2983
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
DESCRIPTION
The CZD2983 is designed for power amplifier and driver stage amplifier
applications.
D-Pack (TO-252)
FEATURES
High transition frequency：f
T
= 100MHz (Typ.)
Complements to CZD1225
A
B
C
D
GE
K
HF
MARKING
2983
1
2
3
Collector
M
J
N
O
P
Date Code
Base
Emitter
REF.
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Device Dissipation
(T
A
=25°C)
Total Device Dissipation
(T
C
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
T
J
T
STG
Ratings
160
160
5
1.5
0.3
1
15
150
-55 ~ 150
Unit
V
V
V
A
A
W
W
℃
℃
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
03-Sep-2010 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
