CZD5706
Elektronische Bauelemente
5 A, 80 V
NPN Epitaxial Silicon Transistor
DESCRIPTION
The CZD5706 is designed for high current switching application.
D-Pack (TO-252)
FEATURES
♦
♦
♦
♦
Large Current Capacitance
Low Collector to Emitter Saturation Voltage
High-Speed Switching
High Allowable Power Dissipation
Collector
MARKING
2
5706
A
B
C
D
Date Code
1
Base
GE
1
B
C
E
3
Emitter
K
HF
N
O
P
M
J
SWITCHING TIME TEST CIRCUIT
REF.
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.35
6.80
5.20
5.50
2.20
2.40
0.40
0.60
6.40
7.35
2.20
3.00
5.40
5.80
0.60
1.20
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
2.30 TYP.
0.70
0.90
0.50
0.70
0.60
1.00
1.40
1.78
0.00
1.27
0.43
0.58
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Total Power Dissipation (T
A
=25°
C)
Total Power Dissipation (T
C
=25°
C)
Junction, Storage Temperature
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
P
D
T
J
, T
STG
RATING
80
80
50
6
5
7.5
1.2
0.8
15
150, -55~150
UNIT
V
V
V
V
A
A
A
W
W
°
C
ElECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
OB
T
ON
T
STG
T
F
MIN.
80
80
50
6
-
-
-
-
-
200
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
400
15
35
300
20
MAX.
-
-
-
-
1
1
135
240
1.2
560
-
-
-
-
-
UNIT
V
V
V
V
µA
µA
mV
mV
V
MHz
pF
nS
nS
nS
TEST CONDITIONS
I
C
=10µA, I
E
=0
I
C
=100µA, R
BE
=0
I
C
=1mA, R
BE
=∞
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
01-June-2009 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
