D965
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
NPN General Purpose Transistor
FEATURES
TO-92
G
H
Audio amplifier
Flash unit of camera
Switching circuit
Emitter
Collector
Base
D
J
A
CLASSIFICATION OF h
FE(2)
Rank
Range
R
340 - 600
T
560 - 950
V
900 - 2000
K
B
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current -Continuous
Cpllector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
42
22
6
5
750
+150, -55 ~ +150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Emitter Cut - Off Current
DC Current Gain
Collector - Emitter Saturation Voltage
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
f
T
Min.
42
22
6
-
-
150
340
150
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
Max.
-
-
-
0.1
0.1
-
2000
-
0.35
-
Unit
V
V
V
Test Conditions
I
C
= 0.1mA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 2V, I
C
= 0.15 mA
V
CE
= 2V, I
C
= 500 mA
V
CE
= 2V, I
C
= 2A
I
C
= 3000mA, I
B
= 100 mA
V
CE
= 6V, I
C
= 50 mA, f = 30MHz
A
A
V
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Nov-2010 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
