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DTA114EE 参数 Datasheet PDF下载

DTA114EE图片预览
型号: DTA114EE
PDF下载: 下载PDF文件 查看货源
内容描述: PNP数字晶体管 [PNP Digital Transistors]
分类和应用: 晶体数字晶体管开关光电二极管
文件页数/大小: 2 页 / 162 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号DTA114EE的Datasheet PDF文件第2页  
DTA114EE / DTA114EUA / DTA114ECA /
DTA114ESA
Elektronische Bauelemente
PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTA114EE (SOT-523)
DTA114EUA (SOT-323)
EQUIVALENT CIRCUIT
Addreviated symbol:14
DTA114ESA (TO-92S)
Addreviated symbol:14
DTA114ECA (SOT-23)
Addreviated symbol:14
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction & Storage temperature
Symbol
E
Limits (DTA114E□)
UA
CA
SA
Unit
V
V
mA
300
mW
V
CC
V
IN
I
O
I
C(MAX)
P
D
T
J
, T
STG
150
-50
-40 ~ 10
-50
-100
200
150, -55~150
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/ R
1
f
T
Min.
-
-3
-
-
-
30
7
0.8
-
Typ.
-
-
-
-
-
-
10
1
250
Max.
-0.5
-
-0.3
-0.88
-0.5
-
13
1.2
-
Unit
V
V
mA
A
KΩ
MHz
Test Conditions
V
CC
= -5V, I
O
= -100A
V
O
= -0.3V, I
O
= -10mA
I
O
/I
I
= -10mA / -0.5mA
V
I
= -5V
V
CC
= -50V, V
I
=0
V
O
= -5V, I
O
= -5mA
V
CE
= -10V, I
E
= -5mA, f=
100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Mar-2012 Rev. B
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