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DTA144TE 参数 Datasheet PDF下载

DTA144TE图片预览
型号: DTA144TE
PDF下载: 下载PDF文件 查看货源
内容描述: PNP数字晶体管 [PNP Digital Transistors]
分类和应用: 晶体数字晶体管光电二极管
文件页数/大小: 2 页 / 148 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号DTA144TE的Datasheet PDF文件第2页  
DTA144TE / DTA144TUA / DTA144TCA /
DTA144TSA
Elektronische Bauelemente
PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTA144TE (SOT-523)
DTA144TUA (SOT-323)
EQUIVALENT CIRCUIT
Addreviated symbol:96
DTA144TSA (TO-92S)
Addreviated symbol:96
DTA144TCA (SOT-23)
Addreviated symbol:96
ABSOLUTE MAXIMUM RATINGS at (T
A
= 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Junction & Storage temperature
Symbol
E
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
150
UA
Ratings
CA
-50
-50
-5
-100
200
150, -55~150
300
SA
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS at (T
A
= 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Input resistor
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R1
Min.
-50
-50
-5
-
-
100
-
-
32.9
Typ.
-
-
-
-
-
300
-
250
47
Max.
-
-
-
-0.5
-0.5
600
-0.3
-
61.1
Unit
V
V
A
A
Test Conditions
I
C
= -50A, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50A, I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -5V, I
C
= -1mA
V
MHz
kΩ
I
C
= -5mA, I
B
= -0.5mA
V
CE
= -10V, I
C
= -5mA,
f= 100MHz
Any changes of specification will not be informed individually.
11-Aug-2010 Rev. A
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