ES11M~ES15M
Elektronische Bauelemente
50V ~ 600V
1.0 Amp Surface Mount Efficient Fast Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Small plastic SMD package.
T
RR
less than 25nS for high efficiency
Low forward drop down voltage
High surge and high current capability.
Superfast recovery time for switching mode application.
Glass-passivated chip junction.
A
SOD-123M
B
F
D
C
E
E
REF.
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0270 g (approximately)
A
B
C
Millimeter
Min.
Max.
3.50
3.90
1.40
1.80
1.30
1.70
REF.
D
E
F
Millimeter
Min.
Max.
3.60 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING
Part Number
ES11M
ES12M
ES13M
Marking
E3
E3
E3
Part Number
ES14M
ES15M
Marking
E4
E5
PACKAGING INFORMATION
Package
SOD-123M
MPQ
2.5K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameters
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Reverse Voltage
Maximum Forward Voltage @ I
F
=1A
Maximum Average Forward Rectified Current
@T
A
=55°C
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Reverse Recovery Time
Typical Junction Capacitance
1
Symbol
ES11M
V
RRM
V
RMS
V
R
V
F
I
O
I
FSM
50
35
50
ES12M
100
70
100
0.875
Part Number
ES13M
200
140
200
ES14M
400
280
400
1.25
1.0
30
5
100
25
15
-65~175, -55~150
ES15M
600
420
600
1.75
Units
V
V
V
V
A
A
T
A
=25°C
T
A
=125°C
I
R
T
RR
C
J
T
STG
, T
J
µA
nS
pF
°
C
Storage and Operating Temperature Range
Note:
1. f=1MHz and applied 4V DC reverse voltage
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
