M8550
Elektronische Bauelemente
-40V, -0.8A, 200mW
PNP Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power dissipation
A
L
3
SOT-23
3
MARKING
Product
M8550
Marking Code
Y21
1
Top View
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE(2)
Product-Rank
Range
M8550-L
85-200
M8550-H
200-300
F
G
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
H
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7’ inch
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-40
-25
-6
-0.8
0.2
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
CEO
h
FE (1)
h
FE (2)
h
FE (3)
V
CE(sat)
V
BE(sat)
f
T
Min.
-40
-25
-6
-
-
45
80
40
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-
300
-
-0.5
-1.2
-
Unit
V
V
V
µA
µA
Test conditions
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -35V, I
E
=0
V
CE
= -20V, I
C
=0
V
CE
= -1V, I
C
= -5mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
= -800mA, I
B
= -80mA
V
CE
= -6V, I
C
= -20mA, f=30MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
*Pulse test：pulse width
≦
300
µ
S, duty cycle
≦
2%.
V
V
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Apr-2011 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
