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MMDT2907A 参数 Datasheet PDF下载

MMDT2907A图片预览
型号: MMDT2907A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅多芯片晶体管 [PNP Silicon Multi-Chip Transistor]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 3 页 / 459 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
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MMDT2907A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen-free
SOT-363
PNP Silicon
Multi-Chip Transistor
*
Features
Power dissipation
P
CM
: 0.15 W (Tamp.= 25 C)
O
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
8
o
0
o
Collector current
I
CM
: -0.6 A
C
2
B
1
E
1
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Collector-base voltage
V
(BR)CBO
: -60 V
Operating & Storage junction Temperature
T
j
, T
stg
: -55 C~ +150 C
O
O
E
2
B
2
C
1
.043(1.10)
.035(0.90)
Marking: K2F, 2F
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25
O
C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
V
CE
(sat)1
V
CE
(sat)2
V
BE
(sat)1
V
BE
(sat)2
Test
conditions
I
E
=0
MIN
-60
-60
-5
-0. 01
-0. 01
75
100
100
100
50
-0.4
-1.6
-1.3
-2.6
200
8
30
10
40
225
60
V
V
V
V
MHz
pF
pF
nS
nS
nS
nS
300
MAX
UNIT
V
V
V
Ic= -10
μ
A,
Ic= -10mA, I
B
=0
I
E
=-10
μ
A, I
C
=0
V
CB
=-50 V , I
E
=0
V
EB
= -3V ,
I
C
=0
V
CE
=-10V, I
C
= -0.1mA
V
CE
=-10V, I
C
= -1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
= -150mA
V
CE
=-10V, I
C
=-500mA
I
C
=-150 mA, I
B
=-15mA
I
C
=-500 mA, I
B
=- 50mA
I
C
=-150 mA, I
B
=-15mA
I
C
=-500 mA, I
B
= -50mA
V
CE
=-20V, I
C
= -50mA
μ
A
μ
A
Base-emitter saturation voltage
Transition frequency
f
T
C
ob
C
ib
t
d
t
r
t
S
t
f
f=
100MHz
V
CB
=-10V, I
E
= 0
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
f=
1MHz
V
EB
=-2V,
I
C
= 0
f=
1MHz
V
CC
=-30V,
I
C
=-150mA,I
B1
=-15mA
V
CC
=-6V, I
C
=-150mA
I
B1
= I
B2
= -15mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2007 Rev.
C
Page 1 of
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