MMDT4413
Elektronische Bauelemente
NPN - PNP
Plastic-Encapsulated Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary Pair
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
8
o
0
o
MARKING
K13
EQUIVALENT CIRCUIT
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
NPN Ratings
60
40
6
0.6
0.2
625
PNP Ratings
-40
-40
-5
-0.6
0.2
625
Unit
V
V
V
A
W
°C/W
°C
150, -55~150
NPN ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
OB
t
d
t
r
t
s
t
f
Min.
60
40
6
-
-
-
20
40
80
100
40
-
-
0.75
-
250
-
-
-
-
-
Max.
-
-
-
0.1
0.5
0.1
-
-
-
300
-
0.4
0.75
0.95
1.2
-
6.5
15
20
225
30
Unit
V
V
V
μA
μA
μA
Test Conditions
I
C
= 100
μA,
I
E
=0
I
C
= 1 mA, IB=0
I
E
= 100
μA,
I
C
=0
V
CB
= 50 V, I
E
=0
V
CE
= 35 V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
I
C
=150 mA, I
B
= 15mA
I
C
=500 mA, I
B
= 50mA
I
C
= 150 mA, I
B
= 15mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 10V, I
C
= 20mA, f=100MHz
V
CB
=5V, I
E
= 0, f=1MHz
V
CC
=30 V, V
BE
=2.0 V, I
C
=150 mA, I
B1
=15 mA
V
CC
=30 V, I
C
=150 mA, I
B1
=-I
B2
= 15 mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2005 Rev. B
Page 1 of 5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
