PZTA14
Elektronische Bauelemente
RoHS Compliant Product
NPN
Transistor
Epitaxial Planar
Transistor
SOT-223
Description
The PZTA14 is darlington amplifier
transistor designed for applications
requiring extremely high current gain.
REF.
Date Code
A 1 4
B
C
E
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
C
Parameter
Value
30
30
10
300
2
-55~+150
Units
V
V
V
mA
W
O
o
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
o
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
Gain-Bandwidth Product
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(on)
h
FE
1
h
FE
2
fT
Min
30
30
10
-
-
-
-
10K
20K
125
Typ.
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
I
C
= 100µA
I
C
= 1mA
I
E
= 10µA
V
CB
=30V
V
EB
=10V
I
C
=100mA,I
B
=0.1mA
V
CE
= 5 V, I
C
=100mA
V
CE
= 5 V, I
C
=10 mA
V
CE
= 5 V, I
C
=100mA
V
CE
= 5 V, I
C
= 10mA,f=100MHz
100
100
1.5
2
-
-
-
MHz
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
