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PZTA42 参数 Datasheet PDF下载

PZTA42图片预览
型号: PZTA42
PDF下载: 下载PDF文件 查看货源
内容描述: 外延平面晶体管 [Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 556 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
PZTA42
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
SOT-223
Description
The PZTA42 is designed for application as
a video output to drive color CRT, or as
dialer circuit in electronics telephone.
A4 2
REF.
A
C
D
E
I
H
o
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
C
Parameter
Value
300
300
6
500
2
-55~+150
Units
V
V
V
mA
W
O
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
o
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(sat)
h
FE
1
h
FE
2
h
FE
3
fT
C
ob
Min
300
300
6
-
-
-
-
25
40
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
500
900
-
-
-
-
3
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
I
C
=100µA
I
C
=1mA
I
E
=10µA
V
CB
=300V
V
EB
=6V
I
C
=20 mA,I
B
=2mA
I
C
=20 mA,I
B
=2mA
V
CE
= 10 V, I
C
= 1mA
V
CE
= 10 V, I
C
=10mA
V
CE
= 10 V, I
C
=30 mA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
50
-
MH z
pF
V
CE
= 20mV, I
C
= 10mA,f=100MHz
V
CB
= 20 V , f=1MHz
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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