Elektronische Bauelemente
115 mA, 60 V, R
DS(ON)
= 7.5
Ω
N-Ch Small Signal MOSFET
S2N7002W
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
♦
♦
♦
Low on-resistance
Low gate threshold voltage
Low input capacitance
Fast switching speed
Low input/output leakage
Ultra-small surface mount package
A
L
3
SOT-323
♦
♦
♦
3
Top View
1
2
C B
1
2
K
E
D
PACKAGE INFORMATION
Drain
3
F
G
H
J
Drain
3
X
Drain
3
1
Gate
6C
72
1
2
Gate Source
X
1
2
Gate Source
2
Source
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
2.00
2.40
1.15
1.35
0.80
1.00
1.20
1.40
0.30
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.00
0.10
0.425 REF.
0.10
0.25
-
-
0.650 TYP.
X=Date Code
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage(R
GS
=1.0M )
Continuous Drain Current (T
A
=25°
C)
Continuous Drain Current (T
A
=100°
C)
Pulsed Drain Current
2
1
1
SYMBOL
V
DDS
V
DGR
I
D
I
DM
V
GS
V
GSM
THERMAL CHARACTERISTICS
RATINGS
60
60
±115
±75
±800
±20
±40
225
UNIT
Vdc
Vdc
mAdc
Continuous Gate-Source Voltage
Non-repetitive Gate-Source Voltage(t
P
≦50µs)
Total Device Dissipation FR-5 Board (T
A
=25°
C)
Derating above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
3
Vdc
Vpk
mW
mW/°
C
°
C/W
°
C
P
D
R
θJA
T
J
, T
STG
1.8
556
-55~150
Notes:
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2.0%
3. FR-5=1.0*0.75*0.62 in.
18-Dec-2009 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
