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S2N7002KW 参数 Datasheet PDF下载

S2N7002KW图片预览
型号: S2N7002KW
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement MOSFET]
分类和应用:
文件页数/大小: 2 页 / 538 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号S2N7002KW的Datasheet PDF文件第2页  
S2N7002KW
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
115mA, 60V
N-Channel Enhancement MOSFET
FEATURES
Low on-resistance
Fast switching Speed
Low-voltage drive
Easily designed drive circuits
ESD protected:1500V
A
3
SOT-323
L
3
Top View
1
2
C B
1
2
K
E
D
F
G
H
J
REF.
DEVICE MARKING: RK
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Drain – Source Voltage
Continuous Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Total Power Dissipation
Channel & Storage Temperature Range
Note:
1.
2.
Pw≦10μS, Duty cycle≦1%
When mounted on a 1x0.75x0.062 inch glass epoxy board
I
I
SYMBOL
V
DSS
V
GSS
I
D
1
DP
RATING
60
±20
115
800
115
800
225
150, -55~150
UNIT
V
V
mA
mA
mA
mA
mW
°C
I
DR
P
1
DRP
2
D
T
CH
, T
STG
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified, per element)
PARAMETER
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
Static Drain-Source On Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-off Delay Time
*
Pw≦300μS, Duty cycle≦1%
10-Jan-2010 Rev. A
Page 1 of 2
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
*
C
ISS
C
OSS
C
RSS
T
d(ON)
*
T
d(OFF)
*
MIN
60
-
-
1
-
-
80
-
-
-
-
-
TYP
-
-
-
1.85
-
-
-
25
10
3.0
12
20
MAX
2
UNIT
V
μA
μA
V
ms
TEST CONDITION
V
GS
=0V, I
D
=10μA
V
DS
=60V, V
GS
=0V
V
DS
=0V , V
GS
=±20V
V
DS
= V
GS,
I
D
=250μA
V
GS
=10V, I
D
=0.5A
V
GS
=5V, I
D
=0.05A
V
DS
=10V, I
D
=0.2A
V
DS
=25V
OFF CHARACTERISTICS
-
1.0
±10
2
ON CHARACTERISTICS
2.5
7.5
7.5
-
50
25
5
20
30
DYNAMIC CHARACTERISTICS
pF
V
GS
=0V
f=1MHz
V
DD
=30V, I
D
=0.2A
R
L
=150Ω, V
Gs
=10V, R
G
=10Ω
SWITCHING CHARACTERISTICS
nS