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S2N7002KT 参数 Datasheet PDF下载

S2N7002KT图片预览
型号: S2N7002KT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement MOSFET]
分类和应用:
文件页数/大小: 4 页 / 465 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
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S2N7002KT
Elektronische Bauelemente
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
Low Gate Charge for Fast Switching.
ESD Protected Gate.
APPLICATIONS
Power Management Load Switch
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
PACKAGE INFORMATION
REF.
A
B
C
D
G
J
Millimeter
Min.
Max.
1.50
1.70
0.75
0.95
0.60
0.80
0.23
0.33
0.50BSC
0.10
0.20
REF.
K
M
N
S
Millimeter
Min.
Max.
0.30
0.50
o
---
10
o
---
10
1.50
1.70
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
tp≦10μs
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
SD
P
D1
T
J
T
STG
RATING
30
±10
154
618
154
300
150
-55~150
UNIT
V
V
mA
mA
mA
mW
°C
°C
Continuous Source Current (Body Diode)
Total Power Dissipation
Operating Junction Temperature Range
Operating Storage Temperature Range
Note 1. Surface—mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
DEVICE MARKING
S2N7002KT = T6
09-Apr-2010 Rev. A
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