S2N7002DW
Elektronische Bauelemente
115mA, 60V
Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On Resistance
Forward Transconductance
T
J
= 25°C
T
J
= 125°C
T
C
= 25°C
T
C
= 125°C
V
(BR)DSS
V
GS(TH)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
FS
60
1
-
-
-
0.5
-
-
80
-
-
-
-
-
-
-
-
-
-
2
±1
1
500
-
7.5
13.5
-
V
V
μA
μA
A
Ω
ms
V
GS
=0, I
D
=10μA
V
DS
=V
GS,
I
D
=250μA
V
DS
=0 , V
GS
= ±20V
V
DS
=60V, V
GS
=0
V
DS
=60V, V
GS
=0
V
GS
=10V, V
DS
=7.5V
V
GS
=5V, I
D
=0.05A
V
GS
=10V, I
D
=0.5A
V
DS
≧2
V
DS(ON)
, I
D
= 0.2A
Typ.
Max.
Unit
Teat Conditions
Body-Drain Diode Ratings
Diode Forward On–Voltage
Source Current Continuous(Body Diode)
Source Current Pulsed
V
SD
I
S
I
SM
-
-
-
-
-
-
-1.5
-115
-800
V
mA
mA
I
S
=115mA, V
GS
=0
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
-
-
-
-
-
-
50
25
5
pF
V
DS
=25V,
V
GS
=0,
f=1MHz
Switching Characteristics
Turn-on Delay Time
Turn-off Delay Time
T
d(ON)
T
d(OFF)
-
-
-
-
20
40
nS
V
DD
=25V, I
D
=0.5A
R
L
=50Ω,
V
GEN
=10V, R
G
=25Ω
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-May-2011 Rev. B
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
