S8050T
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
NPN Silicon
General Purpose Transistor
FEATURES
Complimentary to S8550T
Collector Current: I
C
= 0.5 A
TO-92
4.55
0.2
3.5
0.2
0.2
(1.27 Typ.)
1.25
1 2 3
2.54
0.1
0.2
14.3
0.2
4.5
1: Emitter
2: Base
3: Collector
0.43
0.08
0.07
0.46
0.1
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
40
25
5
500
625
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
AMB
= 25°C unless otherwise specified)
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Min.
40
25
5
-
-
-
85
50
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.1
400
-
0.6
1.2
-
Unit
V
V
V
μA
μA
μA
Test Conditions
I
C
= 100
μA,
I
E
= 0
I
C
= 0.1 mA, I
B
= 0
I
E
= 100
μA,
I
C
= 0
V
CB
= 40 V, I
E
= 0
V
CE
= 20 V, I
B
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 1 V, I
C
= 50 mA
V
CE
= 1 V, I
C
= 500 mA
V
V
MHz
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 6 V, I
C
= 20 mA, f = 30 MHz
CLASSIFICATION OF h
FE
Rank
Range
B
85 - 160
C
120 - 200
D
160 - 300
D3
300 - 400
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2005 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
