S9012T
PNP Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55
±0.2
TO-92
3.5
±0.2
4.5
±0.2
FEATURE
Power dissipation
P
CM
: 0.625 W Tamb=25
Collector current
I
CM:
-0.5
A
Collector-base voltage
V
(BR)CBO
: -40
V
0.46
+0.1
–0.1
14.3
±0.2
0.43
+0.08
–0.07
(1.27 Typ.)
1.25
–0.2
1 2 3
2.54
±0.1
+0.2
Operating and storage junction temperature range
Tj, T
stg
:
-55
to +150
Tamb=25
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE(sat)
V
CE
=-1V, I
C
= -500mA
I
C
= -500 mA, I
B
= -50mA
I
C
= -500 mA, I
B
=- 50mA
V
CE
=-6V,I
C
=-20mA,
f=30MHz
40
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
unless
Test
otherwise
specified
TYP
MAX
UNIT
V
V
V
-0.1
-0.1
-0.1
A
A
A
conditions
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
E
=0
MIN
-40
-25
-5
Ic= -100 A
I
C
= -1 mA ,
I
E
= -100 A
V
CB
=- 40V ,
V
CB
=-20V ,
V
EB
=- 5V, I
C
=0
V
CE
=-1V, I
C
=-50mA
64
300
-0.6
-1.2
V
V
Transition frequency
f
T
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
