S9014T
Elektronische Bauelemente
NPN Silicon
Pre-Amplifier, Low Level & Low Noise
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55
±0.2
FEATURES
3.5
±0.2
4.5
±0.2
Power dissipation
P
CM
:
Collector current
I
CM
:
0.1 A
0.4 W
Collector-base voltage
V
(BR)CBO
: 50 V
Operating & storage junction temperature
14.3
±0.2
0.46
+0.1
–0.1
0.43
+0.08
–0.07
(1.27
Typ.)
O
T
j
, T
stg
: - 55 C ~ + 150 C
1 2 3
O
1.25
–0.2
+0.2
1: Emitter
2: Base
3: Collector
2.54
±0.1
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
O
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Test
conditions
I
E
=0
MIN
50
45
5
TYP
MAX
UNIT
V
V
V
Ic= 100
μ
A，
Ic= 0.1mA， I
B
=0
I
E
=100
μ
A， I
C
=0
V
CB
=50 V , I
E
=0
V
CE
=35V ,
V
EB
= 3V ,
V
CE
=5V,
I
B
=0
I
C
=0
I
C
= 1mA
0.1
0.1
0.1
60
1000
0.3
1
μ
A
μ
A
μ
A
I
C
=100 mA, I
B
= 5mA
I
C
=100 mA, I
B
= 5mA
V
CE
=5V,
I
C
= 10mA
150
V
V
Transition frequency
f
T
f=
30MHz
MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
A
60-150
B
100-300
C
200-600
D
400-1000
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
