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S9018T 参数 Datasheet PDF下载

S9018T图片预览
型号: S9018T
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑封装晶体管 [NPN Plastic-Encapsulate Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 106 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
S9018T
NPN Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55
±0.2
TO-92
3.5
±0.2
4.5
±0.2
FEATURE
Power dissipation
14.3
±0.2
0.46
+0.1
–0.1
0.43
+0.08
–0.07
(1.27 Typ.)
P
CM
:
Collector current
0.4
W
(Tamb=25
C)
o
0.05
I
CM:
Collector-base voltage
V
(BR)CBO
: 25
A
V
1.25
–0.2
1 2 3
2.54
±0.1
+0.2
Operating and storage junction temperature range
Tj, T
stg
:
-55
o
C to +150
o
C
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (Tamb=25 C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
o
unless otherwise specified)
Test
conditions
MIN
25
18
4
0.1
0.1
0.1
28
270
0.5
1.4
V
V
TYP
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 0. 1mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 20V, I
E
=0
V
CE
= 15V, I
B
=0
V
EB
= 3V, I
C
=0
V
CE
= 5V, I
C
= 1mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=5 V, I
C
=5 mA
f =
400MHz
µ
A
µ
A
µ
A
Transition frequency
f
T
600
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
D
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
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