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SBR10100_09 参数 Datasheet PDF下载

SBR10100_09图片预览
型号: SBR10100_09
PDF下载: 下载PDF文件 查看货源
内容描述: 10.0安培肖特基势垒整流器 [10.0 Amp Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 110 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号SBR10100_09的Datasheet PDF文件第2页  
SBR10100
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
VOLTAGE 100 V
10.0 Amp Schottky Barrier Rectifiers
TO-220
B
N
D
E
M
FEATURES
A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
P
H
J
K
L
Dimensions in millimeters
O
C
G
F
MECHANICAL DATA
L
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.93 grams (approximate)
PIN 1
PIN 3
REF.
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
14.22
16.51
9.65
10.67
12.50
14.75
3.56
4.90
0.51
1.45
2.03
2.92
0.31
0.76
4.93 (TYP)
CASE
PIN 2
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
1.09
1.78
0.38
1.02
2.39
2.69
2.50
3.43
3.10
4.09
8.38
9.65
0.89
1.45
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25
°
C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
V
RRM
V
RSM
V
DC
I
F
I
FSM
V
F
I
R
C
J
R
JA
dv / dt
T
J
T
STG
SBR10100
100
100
100
5
10
130
0.82
0.70
0.05
10
350
2.5
10000
-50 ~ +150
-65 ~ +175
UNITS
V
V
V
A
A
V
Per Leg
Per Device
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous
I
F
= 5 A, T
A
= 25°C, per leg
Forward Voltage
I
F
= 5 A, T
A
= 125°C, per leg
Maximum DC Reverse Current
T
A
= 25°C
at Rated DC Blocking Voltage
T
A
= 100°C
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Case.
mA
pF
°
C /W
V /
s
°
C
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Jul-2009 Rev. C
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