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SBR2060_11 参数 Datasheet PDF下载

SBR2060_11图片预览
型号: SBR2060_11
PDF下载: 下载PDF文件 查看货源
内容描述: 电压60V 20.0安培肖特基势垒整流器 [Voltage 60V 20.0 Amp Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 283 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号SBR2060_11的Datasheet PDF文件第2页  
SBR2060
Elektronische Bauelemente
Voltage 60V
20.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
P
A
O
MECHANICAL DATA
H
J
K
L
Millimeter
Min.
Max.
14.22
16.51
9.65
10.67
12.50
14.75
3.56
4.90
0.51
1.45
2.03
2.92
0.31
0.76
3.5
4.5
C
G
F
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
0.7
1.78
0.38
1.02
2.39
2.69
2.50
3.43
3.10
4.09
8.38
9.65
0.89
1.45
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.93 grams (Approximately)
L
REF.
A
B
C
D
E
F
G
H
PIN 1
PIN 3
CASE
PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(Per Leg)
(Per Device)
Peak Forward Surge Current, 8.3 ms single half sine-wave
Superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward
Voltage
Blocking Voltage
4
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
V
F
I
R
C
J
R
θJC
dv / dt
T
J
T
STG
Rating
60
60
60
10
20
200
0.71
0.66
0.1
15
450
2
Unit
V
V
V
A
A
V
mA
pF
°C
/ W
I
F
=10 A, T
A
=25°C, per leg
I
F
=10 A, T
A
=100°C, per leg
T
A
= 25°C
T
A
= 100°C
Maximum DC Reverse Current at Rated DC
Typical Junction Capacitance
1
Typical Thermal Resistance R
θJC
2
Voltage Rate of Chance (Rated V
R
)
Operating Temperature Range T
J
Storage Temperature Range T
STG
Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Case.
3. Pulse Test: Pulse Width =300uS, Duty Cycle<=2%.
10000
-50~150
-65~175
V /
μs
°C
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Aug-2011 Rev. C
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