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SCG3019 参数 Datasheet PDF下载

SCG3019图片预览
型号: SCG3019
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement MOSFET]
分类和应用:
文件页数/大小: 4 页 / 191 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
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SCG3019
Elektronische Bauelemente
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
Low on-resistance.
Fast switching speed.
Low voltage drive makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
EQUIVALENT CIRCUIT
REF.
A
B
C
D
G
J
Millimeter
Min.
Max.
1.50
1.70
0.75
0.95
0.60
0.80
0.23
0.33
0.50BSC
0.10
0.20
REF.
K
M
N
S
Millimeter
Min.
Max.
0.30
0.50
o
---
10
o
---
10
1.50
1.70
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Operating Storage Temperature Range
Thermal Resistance, Junction to Ambient
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
J
T
STG
R
θJA
RATING
30
±20
0.1
0.15
150
-55~150
833
UNIT
V
V
A
W
°C
°C
°C / W
DEVICE MARKING
KN
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-May-2010 Rev. A
Page 1 of 4