SCS202NF
Elektronische Bauelemente
80 V, 300 mA
Plastic-Encapsulated, Dual Series Chips
Small Signal Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Ultra high speed switching
High reliability
Suitable for high packaging density layout
Fast reverse recovery time : t
rr
= 1.5ns (typ.)
Construction: silicon epitaxial planar
SOT-323
A
3
3
L
Top View
1
2
C B
1
2
PACKAGING INFORMATION
Four types of packaging are available
Weight: 0.0078 g (Approx.)
K
E
D
F
G
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
H
J
Millimeter
Min.
Max.
0.20
0.40
-
-
0.525 REF.
0.08
0.15
REF.
REF.
F
G
H
J
MARKING CODE
N
,
A3
A
B
C
D
E
ABSOLUTE MAXIMUM RATINGS
(each diode)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current 1μS
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
RM
V
R
I
FM
I
O
I
SURGE
P
D
T
J
, T
STG
Ratings
80
80
300
100
4
200
+150, -55 ~ +150
Unit
V
V
mA
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)(each
diode)
Parameter
Forward Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Reverse Recovery Time
Symbol
V
F
I
R
C
T
T
RR
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4.0
Unit
V
μA
pF
nS
Test Conditions
I
F
= 100 mA
V
R
= 70V
V
R
= 6 V, f = 1 MHz
V
R
= 6 V, I
F
= 5 mA
Notes: 1. FR–5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
01-April-2009 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
