SCS411SDF
Elektronische Bauelemente
VOLTAGE 40 V, 0.5 A
Small Signal Schottky Barrier Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
DESCRIPTION
The SCS411SDF is designed for low power rectification.
1
A
L
3
3
Top View
2
C B
1
2
K
E
D
MARKING: 05T
K
3
F
G
H
J
05T
REF.
1
A
2
NC
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified.)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec Single Half Sine-Wave
Typical Junction Capacitance between Terminal
1
Maximum Average Forward Rectified Current
Total Power Dissipation
Junction & Storage Temperature
SYMBOL
V
RRM
V
RMS
V
DC
I
FSM
C
J
I
O
P
D
T
J
,T
STG
VALUE
40
28
20
3.0
20
0.5
225
125, -40~125
UNIT
V
V
V
A
pF
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified.)
PARAMETER
Reverse Breakdown Voltage
Maximum Instantaneous Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN
40
-
-
-
MAX
-
300
500
30
UNIT
V
mV
mV
µA
TEST CONDITION
I
R
=100µA
I
F1
=10mA
I
F2
=500mA
V
R
=10V
Maximum Average Reverse Current
I
R
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Nov-2009 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
