SCS751DS
Elektronische Bauelemente
30 mA, 40 V
Plastic-Encapsulate Schottky Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Silicon epitaxial planar
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
DFNWB
APPLICATION
High speed switching For Detection
For portable equipment: (i.e. Mobile phone, MP3, MD, CD-ROM,
DVD-ROM, Note book PC, etc)
REF.
A
B
C
D
Millimeter
Min.
Max.
0.55
0.65
0.95
1.05-
0.4
0.5
0
0.05
REF.
E
F
G
H
Millimeter
Min.
Max.
0.15
0.35
0.05REF
0.4
0.6
0.65TYP
MARKING :
Cathode
-
5
+
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at T
A
= 25°
C
PARAMETER
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current
Junction, Storage Temperature
SYMBOL
V
RM
V
R
I
o
I
FSM
T
J
, T
STG
RATINGS
40
30
30
150
+125, -40 ~ +125
UNIT
V
V
mA
mA
°
C
C
ELECTRICAL RATING at T
A
= 25°
PARAMETERS
Forward Voltage
Reverse Current
Capacitance between terminals
SYMBOL
V
F
I
R
C
T
MIN.
TYP.
MAX.
0.37
0.5
UNIT
V
µA
pF
TEST CONDITIONS
I
F
= 1mA
V
R
= 30V
V
R
= 30V, f = 1MHZ
2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Nov-2009 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
