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SGM0410 参数 Datasheet PDF下载

SGM0410图片预览
型号: SGM0410
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5A , 100V , RDS ( ON) 170米? N沟道增强型功率MOSFET [3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 4 页 / 1535 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
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SGM0410
Elektronische Bauelemente
3.5A , 100V , R
DS(ON)
170 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM0410 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
A
Top View
SOT-89
CB
1
2
3
4
K
E
L
D
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
F
G
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
2.40
2.60
1.40
1.60
3.00 REF.
0.40
0.52
H
J
Millimeter
Min.
Max.
-
-
0.89
1.20
0.35
0.41
0.70
0.80
1.50 REF.
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
MARKING
0410
= Date code
D
24
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
Leader Size
7 inch
3
S
1
G
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous DrainCurrent @
V
GS
=5V, T
A
=70°
C
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
T
J
, T
STG
1,2
3
Symbol
V
DS
V
GS
V
GS
=5V, T
A
=25°
C
I
D
I
DM
T
A
=25°
C
P
D
Rating
100
±20
3.5
2.2
10
2
0.016
-55~150
Unit
V
V
A
A
A
W
W/°
C
°
C
Thermal Resistance Rating
Thermal Resistance Junction-Ambient (Max).
3
R
θ
JA
62.5
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3-Nov-2011 Rev. A
Page 1 of 4