SGM2310A
Elektronische Bauelemente
5 A, 60 V, R
DS(ON)
115 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
A
Top View
DESCRIPTION
The SGM2310A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device. The SGM2310A is universally
used for all commercial-industrial applications.
CB
1
2
3
4
K
E
L
D
FEATURES
Simple drive requirement
Super high density cell design for extremely low R
DS(ON)
F
G
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
2.40
2.60
1.40
1.60
3.00 REF.
0.40
0.52
H
J
Millimeter
Min.
Max.
-
-
0.89
1.20
0.35
0.41
0.70
0.80
1.50 REF.
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
MARKING
1
G
= Date code
24
D
2310A
3
S
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
T
J
, T
STG
1,2
3
3
SYMBOL
V
DS
V
GS
I
D
@ T
A
= 25°
C
I
D
@ T
A
= 70°
C
I
DM
P
D
@ T
A
= 25°
C
RATINGS
60
±20
5.0
4.0
10
1.5
0.01
-55~150
UNIT
V
V
A
A
A
W
W/°
C
°
C
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient (Max).
3
SYMBOL
R
θJA
VALUE
83.3
UNIT
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Dec-2009 Rev. A
Page 1 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
