SGM2310
Elektronische Bauelemente
3A,
60V,R
DS(ON)
90m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SGM2310 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.The SGM2310 is
universally used for all commercial-industrial applications.
SOT-89
Features
*
Small Package Outline
*
Simple Drive Requirement
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
REF.
A
B
C
D
E
F
REF.
G
H
I
J
K
L
M
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55~+150
Unit
V
V
A
A
A
W
W /
o
C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
83.3
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
