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SGM3055 参数 Datasheet PDF下载

SGM3055图片预览
型号: SGM3055
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强模式电源Mos.FET [N-Channel Enhancement Mode Power Mos.FET]
分类和应用:
文件页数/大小: 6 页 / 1271 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
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SGM3055
Elektronische Bauelemente
15A, 30V,R
DS(ON)
100m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SOT-89 package is universally preferred for all
commercial industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
SOT-89
D
REF.
A
B
C
D
E
F
S
G
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=10
0 C
I
DM
P
D
@T
A
=25
C
Tj, Tstg
o
o
o
Ratings
30
±20
15
9
50
15
-55~+150
Unit
V
V
A
A
A
W
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Max.
Max.
Symbol
Rthj-a
Rthj-c
Ratings
42
3
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
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