SID05N10
Elektronische Bauelemente
5A , 100V , R
DS(ON)
170 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID05N10 provide the designer with the best
combination of fast switching, The TO-251 package is
universally preferred for all commercial-industrial surface
mount applications. The device is suited for charger,
industrial and consumer environment.
TO-251
FEATURES
Low On-resistance
Fast Switching Speed
Low-voltage drive (4V)
Wide SOA (safe operating area)
Easily designed drive circuits
Easy to parallel
2
A
B
C
D
GE
K
F
H
MARKING:
05N10
Date code
Drain
M
J
P
1
Gate
REF.
A
B
C
D
E
F
3
Source
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
2.20
2.40
0.45
0.55
6.80
7.20
7.20
7.80
REF.
G
H
J
K
M
P
Millimeter
Min.
Max.
5.40
5.80
0.90
1.50
2.30
0.60
0.90
0.50
0.70
0.45
0.60
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Symbol
V
DS
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
P
D
R
θJC
R
θJA
Ratings
100
±20
5
3.75
20
20
6.25
110
0.16
Unit
V
V
A
A
A
W
°C
/ W
°C
/ W
W /
°C
°C
Total Power Dissipation @ T
C
= 25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Linear Derating Factor
Operating Junction & Storage temperature
T
J
, T
STG
-55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
Page 1 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
