SID3310
Elektronische Bauelemente
-10A, -20V,R
DS(ON)
150m
Ω
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID3310
provide the designer with the best combination of
fast switching, ruggerized device device design, low on-resistance
and cost -effectiveness.
The TO-251 is universally
preferred
for all commercial-industrial
surface mount
applications
and suited for low voltage applications
such as DC/DC converters.
5.6
±0.2
7.0
±0.2
6.6
±0.2
5.3
±0.2
TO-251
2.3
±0.1
0.5
±0.05
1.2
±0.3
Features
*
2.5V Gate Drive Capability
7.0
±0.2
0.75
±0.15
*
Simple Drive Requirement
0.6
±0.1
2.3
REF.
0.5
±0.1
G
D
D
S
Dimensions in millimeters
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
= 100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
-20
±12
-10
-6.2
-24
25
0.01
Unit
V
V
A
A
A
W
W/ C
o
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
5.0
110
o
Unit
o
C /W
C /W
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
