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SM10100D1 参数 Datasheet PDF下载

SM10100D1图片预览
型号: SM10100D1
PDF下载: 下载PDF文件 查看货源
内容描述: 10.0 AMP表面贴装肖特基整流器 [10.0 AMP Surface Mount Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 105 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号SM10100D1的Datasheet PDF文件第2页  
SM1020D1
THRU
SM10100D1
Elektronische Bauelemente
VOLTAGE 20V ~ 100V
10.0 AMP Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
D-Pack
6.6
0.2
0.2
0.1
FEATURES
5.3
2.3
0.5
0.1
0.1
2.5
1
0.8
0.1
3
1.0
0.3
2
0.2
.
Low forward voltage drop
.
High current capability
.
High reliability
.
High surge current capability
.
Epitaxial construction
0.3
0.1
2
0.2
5.6
7.0
0.2
1.2
1.5Max
0.3
0.6
2.3
0.1
MECHANICAL DATA
0.7
.
Case: Molded plastic
.
Epoxy: UL 94V-0 rate flame retardant
.
Metallurgically bonded construction
.
Polarity: Color band denotes cathode end
.
Mounting position: Any
.
Weight: 0.70 grams
PIN 1
PIN 2
CASE
PIN 3
Dimensions in
millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SM1020D1
SM1040D1
SM1060D1
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
20
40
60
Working Peak Reverse Voltage
20
40
60
Maximum DC Blocking Voltage
20
40
60
Maximum Average Forward Rectified
10.0
A
Current, See Fig. 1
Peak Forward Surge Current, 8.3 mS single
125
A
half Sine-wave superimposed
on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage
0.55
0.65
At 5.0A
per leg.
Maximum DC Reverse Current Ta=25
C
0.3
0.15
At Rated DC Blocking Voltage Ta=100
C
45
22.5
Typical Junction Capacitance (Note 1)
250
Typical Thermal Resistance R JC (Note 2)
10
Operating Temperature Range T
J
-50 ~ +150
Storage Temperature Range T
STG
-65 ~ +175
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5"(12.7mm) Lead Length.
O
O
O
SM10100D1
100
100
100
UNITS
V
V
V
0.83
0.05
7.5
V
mA
pF
/W
01-Jun-2005 Rev.
B
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