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SM10200D1 参数 Datasheet PDF下载

SM10200D1图片预览
型号: SM10200D1
PDF下载: 下载PDF文件 查看货源
内容描述: 10.0AMP肖特基势垒整流器 [10.0AMP Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 785 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号SM10200D1的Datasheet PDF文件第2页  
SM10200D1
Elektronische Bauelemente
VOLTAGE 200V
10.0AMP Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
D-Pack
6.6
0.2
0.2
0.1
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
5.3
2.3
0.5
0.1
0.1
2
0.2
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity: As Marked
* Mounting position: Any
* Weight: 0.7 grams(Approximately)
2.5
0.8
0.1
3
1.0
MECHANICAL DATA
1
0.3
2
0.2
5.6
7.0
0.2
1.2
1.5Max
0.3
0.7
0.3
0.1
0.6
2.3
0.1
PIN 1
PIN 3
PIN 2
CASE
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage (I
F
= 5 Amps,T = 25 C)
F
Maximum Instantaneous Forward Voltage (I
F
= 5 Amps, T
F
= 125 C)
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=125 C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance RθJC
(Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
SM10200D1
200
200
200
10
120
0.92
0.75
UNITS
V
V
V
A
A
V
mA
mA
pF
C/W
C
C
0.02
10
350
10
-50
~
+150
-65
~
+175
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Case.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
04-Jun-2010 Rev. B
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