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SM1040DS1 参数 Datasheet PDF下载

SM1040DS1图片预览
型号: SM1040DS1
PDF下载: 下载PDF文件 查看货源
内容描述: 10.0AMP肖特基势垒整流器 [10.0AMP Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 362 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号SM1040DS1的Datasheet PDF文件第2页  
SM1040DS1
Elektronische Bauelemente
VOLTAGE
40V
10
.0AMP Schottky Barrier Rectifiers
D-Pack
6.6
5.3
0.2
0.2
0.1
2.3
0.5
0.1
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
5.6
7.0
0.2
0.2
0.1
2.5
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity: As Marked
* Mounting position: Any
0.7
0.2
0.8
0.1
1.0
0.3
1.2
1.5Max
0.3
0.3
0.1
0.6
2.3
0.1
Cathode
Anode
Anode
Dimensions in
millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYP
E NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage (I
F
= 10 Amps,T
A
= 25 C, per leg)
Maximum Instantaneous Forward Voltage (I
F
= 10 Amps,T
A
= 125 C, per leg)
Maximum DC Reverse Current
Ta=25
o
C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note 2)
Voltage Rate Of Chance (Rated V
R
)
Operating Temperature Range
Storage Temperature Range
NOTES:
SYMBOL
V
RRM
V
RSM
V
DC
I
F
I
FSM
V
F
I
R
C
J
JA
dv/dt
T
J
T
STG
SM1040DS1
40
40
40
10
150
0.58
0.53
0.30
15
450
12
10000
-50
~
+150
-65
~
+175
UNITS
V
V
V
A
A
V
mA
o
Ta=125 C
o
pF
C/W
C
C
V/us
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Ambient.
01-Jun-2006 Rev. A
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
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