SS8050
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
3
3
Complimentary to SS8550
Power Dissipation
P
CM
: 0.3W
Collector Current
I
CM
: 1.5A
Collector - Base Voltage
V
(BR)CBO
: 40V
Operating & Storage junction temperature
T
J
, T
STG
: -55
℃
~ +150
℃
Top View
1
2
C B
1
2
K
E
D
Collector
F
G
H
J
Base
REF.
A
B
C
D
E
F
MARKING : Y1
Emitter
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
40
25
5
1.5
0.3
150, -55~150
UNIT
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
TEST CONDITIONS
I
C
=100µA, I
E
=0
I
C
=0.1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=40V, I
E
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=10V, I
C
=50mA,f=30MHz
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
F
T
MIN.
40
25
5
MAX.
UNIT
V
V
V
µA
µA
µA
120
40
0.1
0.1
0.1
400
0.5
1.2
100
V
V
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L
120-200
H
200-350
J
300-400
Y1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2009 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
