CF5014 series
5V operation
V
DD
= 4.5 to 5.5V, V
SS
= 0V, Ta =
−
40 to +85
°
C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, V
DD
= 4.5V, I
OH
= 8mA
Q: Measurement cct 1, V
DD
= 4.5V, I
OL
= 8mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
V
OL
= V
SS
CF5014AL1
CF5014AL2
Current consumption
I
DD
Measurement cct 3, load cct 1,
INHN = open, C
L
= 30pF, f = 60MHz
CF5014AL3
CF5014AL4
CF5014AL5
Standby current
INHN pull-up resistance
Feedback resistance
Built-in capacitance
I
ST
R
UP1
R
UP2
R
f
C
G
C
D
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
15.3
18
20.7
pF
Measurement cct 3, INHN = LOW
Measurement cct 4
10
100
15.3
50
300
18
150
600
20.7
kΩ
kΩ
pF
3.9
–
0.7V
DD
–
–
–
–
–
–
–
–
–
1
typ
4.2
0.3
–
–
–
–
17
11.5
8.5
7
6
–
3
max
–
0.4
–
0.3V
DD
10
10
34
23
17
14
12
10
9
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
µA
MΩ
Unit
SEIKO NPC CORPORATION —5
SEIKO [ SEIKO EPSON CORPORATION ]
