E0C6008
● Oscillation Characteristics
Oscillation characteristics will vary according to different conditions (elements used, boad pattern). Use the following char-
acteristics are as reference values.
E0C6008 (OSC1 Crystal Oscillation)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, Crystal: C-002R (CI=35kΩ), CG=25pF, CD=built-in, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Symbol
Vsta
Vstp
Condition
Min.
-1.8
-1.8
Typ.
Max. Unit
(
)
t
t
sta≤5sec VSS
V
V
pF
(
)
stp≤10sec VSS
CD
Including the parasitic capacitance inside the chip
20
∆f/∆V
∆f/∆IC
V
SS=-1.8 to -3.5V
5
10
ppm
ppm
ppm
V
-10
35
∆f/∆C
G
C
G
=5 to 25pF
45
(
V
)
Harmonic oscillation start voltage Vhho
Permitted leak resistance
SS
-3.5
Rleak
Between OSC1 and VDD
200
MΩ
E0C60L08 (OSC1 Crystal Oscillation)
(Unless otherwise specified: VDD=0V, VSS=-1.5V, Crystal: C-002R (CI=35kΩ), CG=25pF, CD=built-in, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Symbol
Vsta
Vstp
Condition
Min.
-1.1
-1.1
Typ.
Max. Unit
(
)
t
t
sta≤5sec VSS
V
V
(
)
stp≤10sec VSS
1
(-0.9)
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage Vhho
Permitted leak resistance
C
∆f/∆V
∆f/∆IC
∆f/∆CG CG=5 to 25pF
D
Including the parasitic capacitance inside the chip
20
45
pF
1
VSS=-1.1 (-0.9) to -1.7V
5
10
ppm
ppm
ppm
V
-10
35
(
V
)
SS
-1.7
Rleak
Between OSC1 and VDD
200
MΩ
1: Parentheses indicate value for operation in heavy load protection mode.
E0C60A08 (OSC1 Crystal Oscillation)
Unless otherwise specified: VDD=0V, VSS=-3.0V, Crystal: C-002R (CI=35kΩ), CG=25pF, CD=built-in, Ta=25°C
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Symbol
Vsta
Vstp
Condition
Min.
-2.2
-2.2
Typ.
Max. Unit
(
)
t
t
sta≤5sec VSS
V
V
pF
(
)
stp≤10sec VSS
CD
Including the parasitic capacitance inside the chip
20
∆f/∆V
∆f/∆IC
V
SS=-2.2 to -3.5V
5
10
ppm
ppm
ppm
V
-10
35
∆f/∆C
G
C
G
=5 to 25pF
45
(
V
)
Harmonic oscillation start voltage Vhho
Permitted leak resistance
SS
-3.5
Rleak
Between OSC1 and VDD
200
MΩ
E0C60A08 (OSC3 CR Oscillation)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, RCR=82kΩ, Ta=25°C)
Condition Min. Typ. Max. Unit
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Symbol
fOSC3
-30 480kHz 30
-2.2
%
V
Vsta (VSS
sta SS=-2.2 to -3.5V
Vstp (VSS
)
t
V
3
msec
V
Oscillation stop voltage
)
-2.2
E0C60A08 (OSC3 Ceramic Oscillation)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, Ceramic oscillator: 500kHz, CGC=CDC=100pF, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation start time
Symbol
Vsta (VSS
Condition
Min.
-2.2
Typ.
Max. Unit
V
)
t
sta
V
SS=-2.2 to -3.5V
5
msec
V
Oscillation stop voltage
Vstp (VSS
)
-2.2
10
SEIKO [ SEIKO EPSON CORPORATION ]
