SILICON NPN TRANSISTOR
2N3767
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Low Saturation Voltage
High Gain Characteristics
Hermetic TO66 Metal Package
High Reliability Screening Options Available
Switching and Medium Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PT
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
Total Power Dissipation at TC = 25°C
De-rate Above TC = 25°C
Junction Temperature Range
Storage Temperature Range
100V
80V
6.0V
4.0A
2.0A
25W
143mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
7.0
Unit
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9157
Issue 1
Page 1 of 2
Website:
http://www.semelab-tt.com