SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4393
•
•
•
High Speed Switching.
Low On Resistance.
Designed For High Reliability and Space Applications.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS
VGS
VGD
IG
PD
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Gate – Drain Voltage
Gate Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
40V
-40V
-40V
50mA
300mW
2mW/°C
-55 to +175°C
-65 to +200°C
TA = 25°C
Derate Above 25°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)GSS
VGS(off)
IDSS
(1)
Parameters
Gate – Source
Breakdown Voltage
Gate – Source
Cut-off Voltage
Saturation
Drain Current
Gate Reverse Current
Test Conditions
VDS = 0V
VDS = 20V
VDS = 20V
VDS = 0V
IG = 1.0µA
ID = 1.0nA
VGS = 0V
VGS = -20V
TA = 150°C
VDS = 20V
VGS = -5V
TA = 150°C
VGS = 0V
VGS = 0
ID = 3mA
ID = 1.0mA
Min.
-40
Typ.
Max.
Units
V
-0.5
5
-3
30
-100
-200
100
200
0.4
100
mA
pA
nA
pA
nA
V
IGSS
ID(off)
VDS(on)
RDS(on)
Drain Cut-off Current
Drain – Source
On Voltage
Drain – Source
On Resistance
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 7281
Issue 2
Page 1 of 2
Website:
http://www.semelab-tt.com
SEME-LAB [ SEME LAB ]
